super fast recovery dual diode module 300 amperes/1200 volts RM300DY1-24S powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 0/07 outline drawing and circuit diagram description: powerex super fast recovery dual diode modules are designed for use in applications requiring fast switching. the modules are isolated for easy mounting with other components on common heatsinks. features: isolated mounting planar chips applications: inverters choppers switching power supplies free-wheeling ordering information: select the complete ten digit module part number you desire from the table below. example: RM300DY1-24S is a 1200v, 300 ampere, super fast recovery dual diode module. type current rating v ces amperes volts (x 100) rm 300 12 dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.18+0.04/-0.02 30.0+1.0/-0.5 d 3.660.01 93.00.25 e 1.890.01 48.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 k 0.55 14.0 l 0.26 dia. 6.5 dia. m m6 metric m6 dimensions inches millimeters n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.87 22.2 s 0.33 8.5 t 0.02 0.5 u 0.110 2.8 v 0.16 4.0 w 0.85 21.5 x 0.94 24.0 a x w f f b n l (4 pla ces) d m (3 pla ces) g g h k k k p p p q q v c s r e c2e 1 e 2 c 1 g2 e2 e1 g1 u t t c measured point (basepla te) c1 e2 c2e1
RM300DY1-24S super fast recovery dual diode module 300 amperes/1200 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 0/07 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol RM300DY1-24S units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c repetitive peak reverse voltage v rrm 1200 volts non-repetitive peak reverse voltage v rsm 1200 volts dc reverse voltage v r(dc) 960 volts forward current i dc 300 amperes mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb weight 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts . static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units repetitive peak reverse current i rrm v rm = v rrm , t j = 150c 10 ma forward voltage drop v fm i fm = 300a, tw 1ms, t j = 25c 3.5 volts reverse recovery time t rr v cc = 600v, i f = 300a, t j = 25c, 250 ns dlf/dt = -6000a/ s, reverse recovery charge q rr v ge1 = v ge2 = 15v, r g = 1 ? 13 c inductive load switching thermal resistance, junction to case r th(j-c) per igbt 1/2 module 0.12 c/w t c and t f measured just under chips contact thermal resistance, case to fin* r th(c-f) per 1/2 module, thermal grease applied 0.04 c/w t c and t f measured just under chips *typical value is measured by using shin-etsu chemical co., ltd. "g746" 0 1 3 4 2 5 10 1 emitter-collect or vo lt ag e, v ec , (v ol ts) free-wheel diode fo rw ard chara cteristics (typical) 10 2 10 3 emitter current , i e , (amperes ) t j = 25 c t j = 125 c time, (s ) transient thermal imped ance chara cteristics 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized va lue) single pulse t c = 25c pe r unit base = r th(j-c) = 0.12c/w normalized transient thermal impedance, z th(j-c' )
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